LET9060F datasheet(1/9 Pages) STMICROELECTRONICS

Part #	LET9060F

Description	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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April 2011

Doc ID 16863 Rev 3

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LET9060F

RF power transistor from the LdmoST family

of n-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT (@ 28 V)= 60 W with 18 dB gain @ 945

MHz

■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945

MHz

■ BeO free package

■ In compliance with the 2002/95/EC european

directive

Description

The LET9060F is a common source n-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The LET9060F is designed for high gain

and broadband performance operating in

common source mode at 28 V. It is ideal for base

station applications requiring high linearity.

Figure 1.

Pin out

M250

epoxy sealed

1

3

2

1. Drain

2. Gate

3. Source

Table 1.

Device summary

Order code

Package

Branding

LET9060F

M250

LET9060F

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LET9060F Datasheet(PDF) 1 Page - STMicroelectronics

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