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INA233 Datasheet(PDF) 5 Page - Texas Instruments

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Part # INA233
Description  High-Side or Low-Side Measurement, Bidirectional Current and Power Monitor With I2C-, SMBus-, and PMBus-Compatible Interface
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

INA233 Datasheet(HTML) 5 Page - Texas Instruments

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5
INA233
www.ti.com
SBOS790 – APRIL 2017
Product Folder Links: INA233
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Although the input range is 36 V, the full-scale range of the ADC scaling is 40.96 V; see the High-Accuracy Analog-to-Digital Convertor
(ADC) section. Do not apply more than 36 V.
(2)
RTI = Referred-to-input.
(3)
Input leakage is positive (current flowing into the pin) for the conditions shown at the top of this table. Negative leakage currents can
occur under different input conditions.
(4)
SMBus timeout in the INA233 resets the interface whenever SCL is low for more than 28 ms.
6.5 Electrical Characteristics
at TA = 25°C, VVS = 3.3 V, VIN+ = 12 V, VSENSE = (VIN+ – VIN–) = 0 mV, and VVBUS = 12 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
Shunt voltage input range
–81.92
81.9175
mV
Bus voltage input range(1)
0
36
V
CMRR
Common-mode rejection ratio
0 V
≤ VIN+ ≤ 36 V
126
140
dB
VOS
Offset voltage, RTI(2)
Shunt voltage
±2.5
±10
µV
Bus voltage
±1.25
±7.5
mV
VOS (RTI
(2)) vs temperature
Shunt voltage, –40°C
≤ TA ≤ +125°C
0.02
0.1
µV/°C
Bus voltage, –40°C
≤ TA ≤ +125°C
10
40
PSRR
Power-supply rejection ratio (RTI (2))
Shunt voltage, 2.7 V
≤ VS ≤ 5.5 V
1
µV/V
Bus voltage
0.5
mV/V
IB
Input bias current (IIN+, IIN– pins)
8
μA
VBUS input impedance
830
Input leakage(3)
(IN+) + (IN–),
power-down mode
0.1
0.5
µA
DC ACCURACY
ADC native resolution
16
Bits
1-LSB step size
Shunt voltage
2.5
μV
Bus voltage
1.25
mV
Shunt voltage gain error
0.02%
0.1%
Shunt voltage gain error vs
temperature
–40°C
≤ TA ≤ +125°C
5
25
ppm/°C
Bus voltage gain error
0.02%
0.1%
Bus voltage gain error vs
temperature
–40°C
≤ TA ≤ +125°C
10
50
ppm/°C
Power gain error
VBUS = 12 V, VIN+ – VIN– = –80 mV
to 80 mV
0.05%
0.2%
Power gain error vs temperature
–40°C
≤ TA ≤ +125°C
10
50
ppm/°C
DNL
Differential nonlinearity
±0.1
LSB
tCT
ADC conversion time
CT bit = 000
140
154
µs
CT bit = 001
204
224
CT bit = 010
332
365
CT bit = 011
588
646
CT bit = 100
1.1
1.21
ms
CT bit = 101
2.116
2.328
CT bit = 110
4.156
4.572
CT bit = 111
8.244
9.068
SMBus
SMBus timeout(4)
28
35
ms


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