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RN2101 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. RN2101
Description  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2101 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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RN2101
~RN2106
2001-06-07
1
Type No.
R1 (kΩ)
R2 (kΩ)
RN2101
4.7
4.7
RN2102
10
10
RN2103
22
22
RN2104
47
47
RN2105
2.2
47
RN2106
4.7
47
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101,RN2102,RN2103
RN2104,RN2105,RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
RN2101~2106
VCEO
−50
V
RN2101~2104
−10
Emitter-base voltage
RN2105, 2106
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
RN2101~2106
Tstg
−55~150

°C
JEDEC
EIAJ
TOSHIBA
2-2H1A
Weight: 2.4mg
Unit: mm


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