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RN1222 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN1222
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1222 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
2001-06-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = 50V, IE = 0
―
―
100
Collector cut-off current
RN1221~1227
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
RN1221
―
3.85
―
7.14
RN1222
―
1.75
―
3.25
RN1223
―

0.82
―
1.52
RN1224
―
VEB = 10V, IC = 0
0.38
―
0.71
RN1225
―

0.365
―
0.682
RN1226
―
VEB = 5V, IC = 0
0.35
―
0.65
Emitter cut-off current
RN1227
IEBO
―
VEB = 6V, IC = 0
0.378
―
0.703
mA
RN1221
―
60
―
―
RN1222
―
65
―
―
RN1223
―

70
―
―
RN1224
―
90
―
―
RN1225
―

90
―
―
RN1226
―
90
―
―
DC current gain
RN1227
hFE
―
VCE = 5V, IC = 100mA
90
―
―
―
RN1221
IC = 50mA, IB = 2mA
Collector-emitter
saturation voltage
RN1222~1227
VCE (sat)
―
IC = 50mA, IB = 1mA
―
―
0.25
V
RN1221
―
1.0
―
3.5
RN1222
―
1.4
―
4.5
RN1223
―

2.0
―
6.5
RN1224
―
3.0
―
12.0
RN1225
―

0.6
―
2.0
RN1226
―
0.7
―
2.5
Input voltage (ON)
RN1227
VI (ON)
―
VCE = 0.2V, IC = 100mA
1.0
―
3.0
V
RN1221~1224
―
0.8
―
1.3
RM1225, 1226
―
0.4
―
0.8
Input voltage (OFF)
RN1227
VI (OFF)
―
VCE = 5V, IC = 0.1mA
0.5
―
1.0
V
Translation frequency
RN1221~1227
fT
―

VCE = 5V, IC = 20mA
―
300
―
MHz
Collector output
capacitance
RN1221~1227
Cob
―

VCB = 10V, IE = 0,
f = 1MHz
―
7
―
pF


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