STFI11N65M2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STFI11N65M2

Description	Extremely low gate charge

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STF11N65M2, STFI11N65M2

Electrical characteristics

DocID025806 Rev 2

5/15

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

7

A

ISDM(1)

Source-drain current

(pulsed)

-

28

A

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 7 A

-

1.6

V

trr

Reverse recovery time

ISD = 7 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16:

"Test circuit for inductive load

switching and diode recovery

times")

-

318

ns

Qrr

Reverse recovery charge

-

2.5

µC

IRRM

Reverse recovery current

-

15.5

A

trr

Reverse recovery time

ISD = 7 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

437

ns

Qrr

Reverse recovery charge

-

3.2

µC

IRRM

Reverse recovery current

-

15

A

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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