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STF11N65M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF11N65M2 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STF11N65M2, STFI11N65M2 Electrical characteristics DocID025806 Rev 2 5/15 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 7 A ISDM(1) Source-drain current (pulsed) - 28 A VSD(2) Forward on voltage VGS = 0 V, ISD = 7 A - 1.6 V trr Reverse recovery time ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 318 ns Qrr Reverse recovery charge - 2.5 µC IRRM Reverse recovery current - 15.5 A trr Reverse recovery time ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 437 ns Qrr Reverse recovery charge - 3.2 µC IRRM Reverse recovery current - 15 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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