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RN1101 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. RN1101
Description  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1101 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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RN1101
~RN1106
2001-06-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50V, IE = 0
100
Collector cut-off
current
RN1101~1106
ICEO
VCE =50V, IB = 0


500
nA
RN1101
0.82
1.52
RN1102
0.38
0.71
RN1103
0.17
0.33
RN1104
VEB = 10V, IC = 0
0.082
0.15
RN1105
0.078

0.145
Emitter cut-off current
RN1106
IEBO
VEB = 5V, IC = 0
0.074

0.138
mA
RN1101
30
RN1102
50
RN1103
70
RN1104
80
RN1105
80
DC current gain
RN1106
hFE
VCE = 5V, IC = 10mA
80
Collector-emitter
saturation voltage
RN1101~1106
VCE (sat)
IC = 5mA, IB = 0.25mA
0.1
0.3
V
RN1101
1.1

2.0
RN1102
1.2
2.4
RN1103
1.3
3.0
RN1104
1.5
5.0
RN1105
0.6
1.1
Input voltage (ON)
RN1106
VI (ON)

VCE = 0.2V, IC = 5mA
0.7
1.3
V
RN1101~1104
1.0
1.5
Input voltage (OFF)
RN1105, 1106
VI (OFF)

VCE = 5V, IC = 0.1mA
0.5
0.8
V
Transition frequency
RN1101~1106
fT

VCE = 10V, IC = 5mA

250
MHz
Collector Output
capacitance
RN1101~1106
Cob

VCB = 10V, IE = 0,
f = 1MHz

3
6

pF

RN1101
3.29
4.7
6.11
RN1102
7
10
13
RN1103
15.4
22
28.6
RN1104
32.9
47
61.1
RN1105
1.54
2.2
2.86
Input resistor
RN1106
R1

3.29
4.7
6.11
kΩ

RN1101~1104
0.9
1.0
1.1
RN1105
0.0421 0.0468 0.0515
Resistor ratio
RN1106
R1/R2

0.09
0.1
0.11



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