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STFI7N80K5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STFI7N80K5
Description  Ultra low gate charge
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFI7N80K5 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID025377 Rev 1
3/14
STF7N80K5, STFI7N80K5
Electrical ratings
14
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
6(1)
1.
Limited by package
A
ID
Drain current (continuous) at TC = 100 °C
3.8(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
24(1)
A
PTOT
Total dissipation at TC = 25 °C
25
W
IAR
Max current during repetitive or single
pulse avalanche
(pulse width limited by Tjmax)
2A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
88
mJ
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
2500
V
dv/dt (3)
3.
ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
Tj
Operating junction temperature
-55 to 150
°C
Tstg
Storage temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W


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