STD110N8F6 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STD110N8F6

Description	Very low gate charge

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Electrical characteristics

STD110N8F6

4/16

DocID027274 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

80

V

IDSS

Zero-gate voltage

drain current

VGS = 0, VDS = 80 V

1

µA

VGS = 0, VDS = 80 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = +20 V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2.5

4.5

V

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 40 A

0.0056 0.0065

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 40 V, f = 1 MHz,

VGS = 0

-

9130

-

pF

Coss

Output capacitance

-

320

-

pF

Crss

Reverse transfer

capacitance

-

225

-

pF

Qg

Total gate charge

VDD = 40 V, ID = 80 A,

VGS = 10 V

(see Figure 14)

-

150

-

nC

Qgs

Gate-source charge

-

40

-

nC

Qgd

Gate-drain charge

-

30

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 55 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

-24-

ns

tr

Rise time

-

61

-

ns

td(off)

Turn-off delay time

-

162

-

ns

tf

Fall time

-

48

-

ns

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