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STP80N10F7 Datasheet(PDF) 4 Page - STMicroelectronics |
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STP80N10F7 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 25 page Electrical characteristics STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 4/25 DocID025865 Rev 1 2 Electrical characteristics (T C = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 250 μA, V GS = 0 100 V I DSS Zero gate voltage drain current (V GS = 0) V DS = 100 V V DS = 100 V, T C =125 °C 1 100 μA μA I GSS Gate-body leakage current (V DS = 0) V GS = 20 V 100 μA V GS(th) Gate threshold voltage V DS = V GS , I D = 250 μA 2.5 3.5 4.5 V R DS(on) Static drain-source on-resistance for DPAK, TO-220 and TO-220FP: I D = 40 A, V GS =10 V 0.0085 0.010 Ω for H 2 PAK-2: V GS =10 V, I D =40 A 0.008 0.0095 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS = 50 V, f = 1 MHz, V GS = 0 - 3100 - pF C oss Output capacitance - 700 - pF C rss Reverse transfer capacitance -45 - pF Q g Total gate charge V DD = 50 V, I D = 80 A, V GS = 10 V (see Figure 18) -45 - nC Q gs Gate-source charge - 18 - nC Q gd Gate-drain charge - 13 - nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d (on) Turn-on delay time V DD = 50 V, I D = 40 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19 and Figure 22) -19 - ns t r Rise time - 32 - ns t d (off) Turn-off delay time - 36 - ns t f Fall time - 13 - ns |
Similar Part No. - STP80N10F7 |
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Similar Description - STP80N10F7 |
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