 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
STF25N10F7 Datasheet(PDF) 5 Page - STMicroelectronics |
|
||||||||||||||||||||||||||||||
STF25N10F7 Datasheet(HTML) 5 Page - STMicroelectronics |
|
|
5 / 21 page  DocID025265 Rev 1 5/21 STD25N10F7, STF25N10F7, STP25N10F7 Electrical characteristics 21 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 50 V, I D = 12.5 A, R G = 4.7 Ω, V GS = 10 V Figure 17 -9.8 - ns t r Rise time - 14 - ns t d(off) Turn-off delay time - 14.8 - ns t f Fall time - 4.6 - ns Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 25 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 100 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. Forward on voltage I SD = 25 A, V GS = 0 - 1.1 V t rr Reverse recovery time I SD = 25 A, di/dt = 100 A/μs, V DD = 80 V, T j = 150 °C -38 ns Q rr Reverse recovery charge - 29 nC I RRM Reverse recovery current - 1.7 A |
Similar Part No. - STF25N10F7 |
|
Similar Description - STF25N10F7 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
