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STD3LN80K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD3LN80K5 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 15 page July 2016 DocID027714 Rev 2 1/15 This is information on a product in full production. www.st.com STD3LN80K5 N- channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code V DS RDS(on) max ID STD3LN80K5 800 V 3.25 Ω 2 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STD3LN80K5 3LN80K5 DPAK Tape and reel D(2, TAB) G(1) S(3) AM01476v1 |
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