STP42N60M2-EP datasheet(4/20 Pages) STMICROELECTRONICS

Part #	STP42N60M2-EP

Description	N-channel 600 V, 0.076 廓 typ., 34 A MDmesh??M2 EP Power MOSFETs in D짼PAK, TO-220 and TO-247 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB42N60M2-EP, STP42N60M2-EP,

STW42N60M2-EP

4/20

DocID027327 Rev 1

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage Drain

current

VGS = 0 V, VDS = 600 V

1

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 17 A

0.076

0.087

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

-

2370

-

pF

Coss

Output capacitance

-

112

-

pF

Crss

Reverse transfer

capacitance

-

2.5

-

pF

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

454

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

4.5

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 34 A,

VGS = 10 V (see Figure 18:

"Gate charge test circuit")

-

55

-

nC

Qgs

Gate-source charge

-

8.5

-

nC

Qgd

Gate-drain charge

-

25

-

nC

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

E(off)

Turn-off energy

(from 90% VGS to 0% ID)

VDD = 400 V, ID = 2.5 A,

RG = 4.7

Ω, VGS = 10 V

-

13

-

µJ

VDD = 400 V, ID = 5 A,

RG = 4.7

Ω, VGS = 10 V

-

14.5

-

µJ

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