This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

May 2013

DocID024706 Rev 1

1/10

10

LET9180

180 W, 32 V Wideband LDMOS transistor

Datasheet

Figure 1. Pin connection

Features

• Excellent thermal stability

• Common source configuration push-pull

• BeO-free package

Description

The LET9180 is a common source n-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to 2

GHz.

M246

Epoxy sealed

1-2 Drain

4-5 Gate

3 Source

12

4

5

Table 1. Device summary

Order code

Packaging

Branding

LET9180

M246

LET9180

www.st.com