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STTH30L06-Y Datasheet(PDF) 2 Page - STMicroelectronics

Part # STTH30L06-Y
Description  Low thermal resistance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH30L06-Y Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH30L06-Y
2/8
Doc ID 018925 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.95 x IF(AV) + 0.010 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS) Forward rms voltage
50
A
IF(AV)
Average forward current
Tc = 125 °C  = 0.530A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
300
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-40 to +175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
1.1
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
25
µA
Tj = 150 °C
80
800
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 30 A
1.55
V
Tj = 150 °C
1.0
1.25
1.
Pulse test: tp = 5 ms,  < 2%
2.
Pulse test: tp = 380 µs,  < 2%
Table 5.
Dynamic Characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
Tj = 25 °C
IF = 0.5 A, Irr = 0.25 A,
IR =1 A
65
ns
IF = 1 A, dIF/dt = 50 A/µs,
VR =30 V
65
90
IRM
Reverse recovery
current
Tj = 125 °C
IF = 30 A, VR = 400 V,
dIF/dt = 100 A/µs
11.5
16
A
tfr
Forward recovery
time
Tj = 25 °C
IF = 30 A, dIF/dt = 100 A/µs,
VFR = 1.1 x VFmax
500
ns
VFP
Forward recovery
voltage
Tj = 25 °C
IF = 30 A, dIF/dt = 100 A/µs,
VFR = 1.1 x VFmax
2.5
V


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