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STT165GK14 Datasheet(PDF) 4 Page - Sirectifier Semiconductors |
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STT165GK14 Datasheet(HTML) 4 Page - Sirectifier Semiconductors |
4 / 4 page STT . 3 STD165 165 . 0 0 Pvtot Pvtot IRMS100 200 W A F ig.4L Power dissipation of three modules vs. direct and rms current 500 ID w3 B6 0 0 50 W 100 Fig.4R Power dissipation of three modules vs. case temp Ta Tc C O C O 150 K/W 500 3 STT . STD . 10 A/us Fig.5 Recovered charge vs. current decrease 100 1/2 1/2 uC Tvj= C o 0 0.001 0.01 K/W 100 Fig.6 Transient thermal impedance vs. time t Zth STT STD . 1/2 1/2 . Zth(j-s) Zth(j-c) 0.1 1 10 s STT . STD165 165 . 0 0 100 200 Fig.7 On-state charactristics 1/2 1/2 A IT Vt 0.5 1 1.5 2 V typ. max. Fig.8 Surge overload current vs. time ITM= 1 t 10 100 ms 1000 0.4 0.6 0.8 1 1.2 1.4 1.6 IT(OV) ITSM 2 STT STD165 165 . 1/2 1/2 . 1 VRRM . 0.5 VRRM . 0 VRRM . ITSM(25 C) =5400A O ITSM(125 C)=5000A O Thyristor-Thyristor Modules STT165GK ** 300 1000 1000 125 165 165 100 1000 10000 Qrr 1 -di /dt T 165 165 300 Tvj=25 C O _ _ Tvj=125 C O 400 1500 1500 125 115 105 95 85 75 0.06 0.05 0.1 0.15 0.2 0.25 0.3 400 500 600 500 0.3 0.2 0.25 0.16 0.12 0.1 0.08 0.07 0.05 0.04 0.03 0.02 Rth(c-a) A 20 A 50 A 100 A 200 A 500 - - P4 ©2009 SIRECTIFIER All rights reserved |
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