NGD8201N datasheet(6/7 Pages) ONSEMI

Part #	NGD8201N

Description	Ignition IGBT

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Manufacturer	ONSEMI [ON Semiconductor]

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NGD8201N

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6

0.000001

0.001

0.0001

0.1

100

1

0.01

t,TIME (S)

110

100

1000

0.1

Figure 13. Minimum Pad Transient Thermal Resistance

(Non−normalized Junction−to−Ambient)

10

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

0.000001

0.001

0.0001

0.1

1

0.01

t,TIME (S)

110

0.1

Figure 14. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

10

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJA(t)

For D=1: RqJC X R(t) for t ≤ 0.1 s

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJC(t)

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NGD8201N Datasheet(PDF) 6 Page - ON Semiconductor

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