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MP6301 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. MP6301
Description  High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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MP6301 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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MP6301
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1)
MP6301
High Power Switching Applications
3-Phase Motor Drive and Bipolar Drive of Pulse Motor
· Small package by full molding (SIP 12 pin)
· High collector power dissipation (6 devices operation)
: PT = 4.4 W (Ta = 25°C)
· High collector current: IC (DC) = ±3 A (max)
· High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
NPN
PNP
Unit
Collector-base voltage
VCBO
100
−100
V
Collector-emitter voltage
VCEO
80
−80
V
Emitter-base voltage
VEBO
8
−8
V
DC
IC
3
−3
Collector current
Pulse
ICP
5
−5
A
Continuous base current
IB
0.5
−0.5
A
Collector power dissipation
(1 device operation)
PC
2.0
W
Collector power dissipation
(6 devices operation)
PT
4.4
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1F
Weight: 3.9 g (typ.)
2
1
R1 R2
11
R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω
5
8
10
7
4
3
6
9
12
R1 R2


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