ILQ615-2 datasheet(3/12 Pages) VISHAY

Part #	ILQ615-2

Description	Optocoupler, Phototransistor Output (Dual, Quad Channel)

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 83652

For technical questions, contact: optocoupleranswers@vishay.com

www.vishay.com

Rev. 1.6, 04-Mar-11

3

ILD615, ILQ615

Optocoupler, Phototransistor Output

(Dual, Quad Channel)

Vishay Semiconductors

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

COUPLER

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Junction temperature

Tj

100

°C

Soldering temperature (1)

2 mm distance from case bottom

Tsld

260

°C

Package power dissipation ILD615

400

mW

Derate linearly from 25 °C

5.33

mW/°C

Package power dissipation ILQ615

500

mW

Derate linearly from 25 °C

6.67

mW/°C

Isolation test voltage

t = 1 s

VISO

5300

VRMS

Isolation voltage

VIORM

890

VP

Total power dissipation

Ptot

250

mW

Creepage distance

 7mm

Clearance distance

 7mm

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

 1012



VIO = 500 V, Tamb = 100 °C

RIO

 1011



ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

VF

1

1.15

1.3

V

Breakdown voltage

IR = 10 μA

VBR

630

V

Reverse current

VR = 6 V

IR

0.01

10

μA

Capacitance

VR = 0 V, f = 1 MHz

CO

25

pF

Thermal resistance, junction to lead

RTHJL

750

K/W

OUTPUT

Collector emitter capacitance

VCE = 5 V, f = 1 MHz

CCE

6.8

pF

Collector emitter leakage current, -1, -2

VCE = 10 V

ICEO

250

nA

Collector emitter leakage current, -3, -4

VCE = 10 V

ICEO

5

100

nA

Collector emitter breakdown voltage

ICE = 0.5 mA

BVCEO

70

V

Emitter collector breakdown voltage

IE = 0.1 mA

BVECO

7V

Thermal resistance, junction to lead

RTHJL

500

K/W

PACKAGE TRANSFER CHARACTERISTICS

Channel/channel CTR match

IF = 10 mA, VCE = 5 V

CTRX/CTRY

1 to 1

2 to 1

COUPLER

Capacitance (input to output)

VIO = 0 V, f = 1 MHz

CIO

0.8

pF

Insulation resistance

VIO = 500 V, TA = 25 °C

RS

1012

1014



Channel to channel isolation

500

VAC

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

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