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TLV70245DBVR Datasheet(PDF) 13 Page - Texas Instruments

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Part No. TLV70245DBVR
Description  300-mA, Low-IQ, Low-Dropout Regulator
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TLV70245DBVR Datasheet(HTML) 13 Page - Texas Instruments

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TLV702xx
GND
EN
IN
OUT
V
IN
V
OUT
On
Off
C
IN
C
OUT
1
F
Ceramic
m
TLV702
www.ti.com
SLVSAG6C – SEPTEMBER 2010 – REVISED MARCH 2015
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TLV702 belongs to a new family of next-generation value LDO regulators. These devices consume low
quiescent current and deliver excellent line and load transient performance. These characteristics, combined with
low noise and very good PSRR with little (VIN – VOUT) headroom, make this family of devices ideal for portable
RF applications. This family of regulators offers current limit and thermal protection, and is specified from –40°C
to +125°C.
8.2 Typical Application
Figure 25. Typical Application Circuit
8.2.1 Design Requirements
Table 2 lists the design parameters.
Table 2. Design Parameters
PARAMETER
DESIGN REQUIREMENT
Input voltage
2.5 V to 3.3 V
Output voltage
1.8 V
Output current
100 mA
8.2.2 Detailed Design Procedure
8.2.2.1 Input and Output Capacitor Requirements
1-
μF X5R- and X7R-type ceramic capacitors are recommended because these capacitors have minimal variation
in value and equivalent series resistance (ESR) overtemperature.
However, the TLV702 is designed to be stable with an effective capacitance of 0.1
μF or larger at the output.
Thus, the device is stable with capacitors of other dielectric types as well, as long as the effective capacitance
under operating bias voltage and temperature is greater than 0.1
μF. This effective capacitance refers to the
capacitance that the LDO sees under operating bias voltage and temperature conditions; that is, the capacitance
after taking both bias voltage and temperature derating into consideration. In addition to allowing the use of
lower-cost dielectrics, this capability of being stable with 0.1-
μF effective capacitance also enables the use of
smaller footprint capacitors that have higher derating in size- and space-constrained applications.
Using a 0.1-
μF rated capacitor at the output of the LDO does not ensure stability because the effective
capacitance under the specified operating conditions must not be less than 0.1
μF. Maximum ESR should be
less than 200 m
Ω.
Copyright © 2010–2015, Texas Instruments Incorporated
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