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FERD30SM100S Datasheet(PDF) 2 Page - STMicroelectronics

Part No. FERD30SM100S
Description  Reduce leakage current
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD30SM100S Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
FERD30SM100S
2/7
DocID027344 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.56 x IF(AV) + 0.005 IF
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, anode terminals
short-circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 130 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
250
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
(1)
Maximum operating junction temperature
175
°C
1.
condition to avoid thermal runaway for a diode on its own heatsink.
dP tot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3. Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
1.6
°C/W
Table 4. Static electrical characteristics (anode terminals short-circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
-
150
µA
Tj = 125 °C
-
8
16
mA
Tj = 125 °C
VR = 70 V
-
-
9
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
--
0.475
V
Tj = 125 °C
-
0.39
0.43
Tj = 25 °C
IF = 10A
--
0.585
Tj = 125 °C
-
0.50
0.545
Tj = 25 °C
IF = 30 A
-0.95
Tj = 125 °C
-
0.64
0.71
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%


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