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FERD30S50 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. FERD30S50
Description  Stable leakage current over reverse voltage
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD30S50 Datasheet(HTML) 3 Page - STMicroelectronics

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Doc ID024715 Rev 2
3/8
FERD30S50
Characteristics
8
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (
 = 0.5)
0
4
8
12
16
20
24
0
5
10
15
20
25
30
35
40
d = 1
d = 0.05
d = 0.2
d = 0.1
d = 0.5
PF(AV)(W)
I
(A)
F(AV)
T
d=tp/T
tp
IF(AV)(A)
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
R th(j-a) = R th(j-c)
T
d=tp/T
tp
T
(°C)
amb
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4. Reverse leakage current versus
reverse voltage applied (typical values)
Z th( j- c)/ Rth ( j- c )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
tp (s)
IR(A)
m
1.E-01
1.E+00
1.E+01
1.E+02
0
5
10
15
20
25
30
35
40
45
50
Tj = 125 °C
Tj = 25 °C
VR(V)
Figure 5. Junction capacitance versus reverse
voltage applied (typical values)
Figure 6. Forward voltage drop versus forward
current (typical values)
100
1000
10000
1
10
100
C(pF)
F = 1 MHz
Vosc= 30 mVRMS
T
j = 25 °C
VR (V)
IF(A )
0.1
1.0
10.0
100.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55
VF (V)
Tj = 125 °C
Tj = 25 °C


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