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FERD30S50 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. FERD30S50
Description  Stable leakage current over reverse voltage
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD30S50 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
FERD30S50
2/8
Doc ID024715 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.205 x IF(AV) + 0.017 IF
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, anode terminals
short-circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
50
V
IF(RMS)
Forward rms current
45
A
IF(AV)
Average forward current,
 = 0.5
Tc = 95 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
(1)
Maximum operating junction temperature
150
°C
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
2.6
°C/W
Table 4. Static electrical characteristics (anode terminals short-circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 125 °C
VR = 35 V
25
mA
Tj = 25 °C
VR = VRRM
0.8
Tj = 125 °C
30
60
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.32
V
Tj = 125 °C
0.25
Tj = 25 °C
IF = 10 A
0.37
Tj = 125 °C
0.33
Tj = 25 °C
IF = 15 A
0.415
0.47
Tj = 125 °C
0.39
0.45
1.
Pulse test: tp = 5 ms,  < 2%
2.
Pulse test: tp = 380 µs,  < 2%


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