FERD20M60 datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

FERD20M60

2/8

DocID027193 Rev 2

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.32 x I

F(AV) + 0.012 IF

(RMS

Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS)

Forward rms current

IF(AV)

Average forward current,

δ = 0.5

Tc = 150 °C

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

275

Tstg

Storage temperature range

-65 to + 175

°C

(1)

Maximum operating junction temperature

175

°C

condition to avoid thermal runaway for a diode on its own heatsink.

dP tot

dTj

---------------

Rth j

–

()

--------------------------

Table 3. Thermal resistance

Symbol

Parameter

Value (max)

Unit

Rth(j-c)

Junction to case

1.6

°C/W

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = 45 V

125

µA

Tj = 125 °C

Tj = 25 °C

VR = VRRM

230

µA

Tj = 125 °C

(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

0.36

Tj = 125 °C

0.30

0.35

Tj = 25 °C

IF = 10A

0.42

0.47

Tj = 125 °C

0.39

0.44

Tj = 25 °C

IF = 20 A

0.51

0.56

Tj = 125 °C

0.51

0.56

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

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