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FERD20M60 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. FERD20M60
Description  Field effect rectifier
Download  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD20M60 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
FERD20M60
2/8
DocID027193 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.32 x I
F(AV) + 0.012 IF
2
(RMS
Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS)
Forward rms current
60
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 150 °C
20
A
IFSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
275
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
(1)
Maximum operating junction temperature
175
°C
1.
condition to avoid thermal runaway for a diode on its own heatsink.
dP tot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3. Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
1.6
°C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = 45 V
125
µA
Tj = 125 °C
10
20
mA
Tj = 25 °C
VR = VRRM
230
µA
Tj = 125 °C
15
30
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.36
V
Tj = 125 °C
0.30
0.35
Tj = 25 °C
IF = 10A
0.42
0.47
Tj = 125 °C
0.39
0.44
Tj = 25 °C
IF = 20 A
0.51
0.56
Tj = 125 °C
0.51
0.56
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%


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