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FERD15S50 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. FERD15S50
Description  ST proprietary process
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD15S50 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
FERD15S50
2/8
DocID025051 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.25 x IF(AV) + 0.02 IF
2
(RMS))
Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
50
V
IF(RMS)
Forward rms current
25
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 120 °C
15
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
80
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(1)
150
°C
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3. Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
2.8
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
250
650
µA
Tj = 125 °C
20
40
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.35
V
Tj = 125 °C
0.30
0.35
Tj = 25 °C
IF = 10 A
0.42
0.48
Tj = 125 °C
0.41
0.45
Tj = 25 °C
IF = 15 A
0.48
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%


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