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SVD5804NT4G Datasheet(PDF) 4 Page - ON Semiconductor

Part # SVD5804NT4G
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SVD5804NT4G Datasheet(HTML) 4 Page - ON Semiconductor

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NTD5804N, NTDV5804N, SVD5804N
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
40
35
15
10
5
0
5
10
0
1000
2000
3000
0
0
5
10
15
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
1
10
1000
0.7
0.5
1.0
0.8
0.6
0.4
0
10
30
20
30
20
25
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
15
0
15
30
45
TJ = 25°C
ID = 30 A
VGS
VDS
QT
VDD = 32 V
ID = 30 A
VGS = 10 V
td(off)
td(on)
tr
TJ = 25°C
VGS = 0 V
tf
Vds
Vgs
30
45
100
0.9
4000
5000
6000
Qgs
Qgd
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
1000
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
100
ms
10 ms
dc
10
ms
1
100
100


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