SVD5804NT4G datasheet(3/6 Pages) ONSEMI

Part #	SVD5804NT4G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTD5804N, NTDV5804N, SVD5804N

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

3

2.5

2

1.5

1

0.5

0

10

20

30

50

70

80

90

6

5

4

3

2

0

50

75

Figure 3. On−Resistance vs. Drain Current

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

10

8

7

6

5

0.005

0.009

0.011

0.013

0.015

0.017

70

30

10

50

0

0.03

0.04

0.05

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

75

50

25

0

−25

−50

0.7

0.8

0.9

1.2

1.3

1.4

1.6

1.8

42

32

22

12

2

10

1000

10,000

40

10 V

4.5 V

VGS = 7, 6, 5.8, 5.5, 5.2, 5 V

4.0 V

3.5 V

TJ = 25°C

25

100

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

ID = 30 A

TJ = 25°C

0.02

0.01

VGS = 5 V

TJ = 25°C

VGS = 10 V

125

150

175

1.0

1.1

1.5

1.7

VGS = 10 V

ID = 69 A

TJ = 100°C

TJ = 150°C

VGS = 0 V

60

20

40

100

0.019

0.021

49

1.9

100

0.007

60

80

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