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NTF2955T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTF2955T1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTF2955, NVF2955 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −60 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 66.4 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −60 V TJ = 25°C −1.0 mA TJ = 125°C −50 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −1.0 mA −2.0 −4.0 V Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −0.75 A 145 170 mW VGS = −10 V, ID = −1.5 A 150 180 VGS = −10 V, ID = −2.4 A 154 185 Forward Transconductance gFS VGS = −15 V, ID = −0.75 A 1.77 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = 25 V 492 pF Output Capacitance COSS 165 Reverse Transfer Capacitance CRSS 50 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V, ID = 1.5 A 14.3 nC Threshold Gate Charge QG(TH) 1.2 Gate−to−Source Charge QGS 2.3 Gate−to−Drain Charge QGD 5.2 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = 10 V, VDD = 25 V, ID = 1.5 A, RG = 9.1 W RL = 25 W 11 ns Rise Time tr 7.6 Turn−Off Delay Time td(OFF) 65 Fall Time tf 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 1.5 A TJ = 25°C −1.10 −1.30 V TJ = 125°C −0.9 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.5 A 36 ns Charge Time ta 20 Discharge Time tb 16 Reverse Recovery Charge QRR 0.139 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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