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NTGS3136PT1G Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NTGS3136PT1G
Description  Power MOSFET
Download  6 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTGS3136PT1G Datasheet(HTML) 4 Page - ON Semiconductor

  NTGS3136PT1G Datasheet HTML 1Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 2Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 3Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 4Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 5Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 6Page - ON Semiconductor  
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NTGS3136P, NVGS3136P
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
SINGLE PULSE TIME (s)
QG, TOTAL GATE CHARGE (nC)
VDS = −10 V
ID = −5.1 A
TJ = 25°C
−VGS
QGS
QGD
−VDS
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 0 V
TJ = 25°C
TJ = 150°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
VGS = −8.0 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
Thermal Limit
Package Limit
100
ms
1 ms
10 ms
dc
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−50
0
−25
25
0.7
0.5
0.3
0.2
50
125
100
TJ, JUNCTION TEMPERATURE (°C)
75
150
ID = −250 mA
0.8
0.6
0.4
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
QT
1.0
10
30
0
0.2
0.4
0.6
0.8
1.0
1.2
80
70
60
50
40
30
20
10
0
1E−3
1E−2
1E−1
1
1E+1
1E+2
1E+3
0.01
0.1
1
1E−04 1E−03 1E−02 1E−01
1
1E+01 1E+02 1E+03
t, TIME (s)
Figure 12. FET Thermal Response
Duty Cycle = 0.5
0.2
0.1
0.05
0.01
0.02


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