 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
NTGS3136PT1G Datasheet(PDF) 4 Page - ON Semiconductor |
|
||||||||||||||||||||||||||||||
NTGS3136PT1G Datasheet(HTML) 4 Page - ON Semiconductor |
|
|
4 / 6 page 
NTGS3136P, NVGS3136P www.onsemi.com 4 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation SINGLE PULSE TIME (s) QG, TOTAL GATE CHARGE (nC) VDS = −10 V ID = −5.1 A TJ = 25°C −VGS QGS QGD −VDS −VSD, SOURCE−TO−DRAIN VOLTAGE (V) VGS = 0 V TJ = 25°C TJ = 150°C Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 VGS = −8.0 V SINGLE PULSE TC = 25°C RDS(on) LIMIT Thermal Limit Package Limit 100 ms 1 ms 10 ms dc −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −50 0 −25 25 0.7 0.5 0.3 0.2 50 125 100 TJ, JUNCTION TEMPERATURE (°C) 75 150 ID = −250 mA 0.8 0.6 0.4 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 QT 1.0 10 30 0 0.2 0.4 0.6 0.8 1.0 1.2 80 70 60 50 40 30 20 10 0 1E−3 1E−2 1E−1 1 1E+1 1E+2 1E+3 0.01 0.1 1 1E−04 1E−03 1E−02 1E−01 1 1E+01 1E+02 1E+03 t, TIME (s) Figure 12. FET Thermal Response Duty Cycle = 0.5 0.2 0.1 0.05 0.01 0.02 |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
