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NTGS3136PT1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTGS3136PT1G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 6 page 
NTGS3136P, NVGS3136P www.onsemi.com 3 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 −50 −25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 4. On−Resistance vs. Drain Current and Gate Voltage −ID, DRAIN CURRENT (A) Figure 5. On−Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) TJ = 25°C VGS = −4.5 V −2.5 V −2 V −1.5 V −1.8 V TJ = 25°C TJ = 125°C TJ = −55°C ID = −5.1 A VDS = −5 V TJ = 25°C VGS = −4.5 V ID = −4.5 A VGS = −5.1 V Figure 6. Capacitance Variation DRAIN−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C f = 1 MHz Coss Ciss Crss −2 V −1.8 V 0 4.0 8.0 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 TJ = 25°C TJ = 125°C 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 4.0 8.0 12 16 20 −2.5 V 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 02 4 6 8 10 12 |
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