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NTGS3136PT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTGS3136PT1G
Description  Power MOSFET
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTGS3136PT1G Datasheet(HTML) 2 Page - ON Semiconductor

  NTGS3136PT1G Datasheet HTML 1Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 2Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 3Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 4Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 5Page - ON Semiconductor NTGS3136PT1G Datasheet HTML 6Page - ON Semiconductor  
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NTGS3136P, NVGS3136P
www.onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
100
°C/W
Junction−to−Ambient – t = 5 s (Note 3)
RqJA
77
Junction−to−Ambient – Steady State (Note 4)
RqJA
185
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250
mA, Reference 25°C
−13
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −20 V
TJ = 25°C
−1.0
mA
TJ = 85°C
−5.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
$0.1
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.4
−1.0
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
3
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −5.1 A
25
33
m
W
VGS = −2.5 V, ID = −4.5 A
32
40
VGS = −1.8 V, ID = −2.5 A
41
51
Forward Transconductance
gFS
VDS = −5.0 V, ID = −5.1 A
22
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = −10 V
1901
pF
Output Capacitance
COSS
274
Reverse Transfer Capacitance
CRSS
175
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −10 V;
ID = −5.1 A
18
29
nC
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
2.4
Gate−to−Drain Charge
QGD
4.3
Gate Resistance
RG
7.6
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −10 V,
ID = −1.0 A, RG = 6.0 W
9
19
ns
Rise Time
Tr
9
19
Turn−Off Delay Time
td(OFF)
99
160
Fall Time
Tf
48
79
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −1.7 A
TJ = 25°C
−0.7
−1.2
V
TJ = 125°C
−0.6
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −1.7 A
37
60
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures


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