© Semiconductor Components Industries, LLC, 2014

August, 2014 − Rev. 1

1

Publication Order Number:

NTGS5120P/D

NTGS5120P, NVGS5120P

Power MOSFET

−60 V, −2.9 A, Single P−Channel, TSOP−6

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

−60

V

Gate−to−Source Voltage

$20

V

Continuous Drain

Current (Note 1)

Steady

State

−2.5

A

−2.0

t v 5 s

−2.9

Power Dissipation

(Note 1)

Steady

State

1.1

W

t v 5 s

1.4

Continuous Drain

Current (Note 2)

Steady

State

−1.8

A

−1.3

Power Dissipation

(Note 2)

0.6

W

Pulsed Drain Current

−20

A

Operating Junction and Storage Temperature

−55 to

150

°C

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3

4

12 56

P−Channel

TSOP−6

CASE 318G

STYLE 1

MARKING

DIAGRAM

XX

= Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

3

2

1

4

Gate

Drain

Source

5

6

Drain

Drain

Drain

−60 V

111 mW @ −10 V

142 mW @ −4.5 V

http://onsemi.com

XX MG

G

1

1

−2.9 A

See detailed ordering and shipping information ion page 5 of

this data sheet.

ORDERING INFORMATION