NTHD4502N datasheet(3/6 Pages) ONSEMI

Part #	NTHD4502N

Description	Power MOSFET

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NTHD4502N

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ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 2.5 A

0.85

1.2

V

Reverse Recovery Time

tRR

VGS = 0 V, IS = 2.9 A,

dIS/dt = 100 A/ms

8.6

ns

Reverse Recovery Charge

QRR

4.0

nC

Reverse Recovery Time

tRR

VGS = 0 V, IS = 1.0 A,

dIS/dt = 100 A/ms

8.4

ns

Reverse Recovery Charge

QRR

4.0

nC

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDD = 24 V,

ID = 1 A, RG = 6 W

6.5

12

ns

Rise Time

tr

5.4

10

Turn−Off Delay Time

td(OFF)

14.9

25

Fall Time

tf

1.8

5.0

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 24 V,

ID = 2.9 A, RG = 2.5 W

7.8

ns

Rise Time

tr

12.6

Turn−Off Delay Time

td(OFF)

9.6

Fall Time

tf

2.8

7. Switching characteristics are independent of operating junction temperatures.

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