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NTHD4502N Datasheet(PDF) 3 Page - ON Semiconductor |
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NTHD4502N Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page NTHD4502N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.5 A 0.85 1.2 V Reverse Recovery Time tRR VGS = 0 V, IS = 2.9 A, dIS/dt = 100 A/ms 8.6 ns Reverse Recovery Charge QRR 4.0 nC Reverse Recovery Time tRR VGS = 0 V, IS = 1.0 A, dIS/dt = 100 A/ms 8.4 ns Reverse Recovery Charge QRR 4.0 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time td(ON) VGS = 10 V, VDD = 24 V, ID = 1 A, RG = 6 W 6.5 12 ns Rise Time tr 5.4 10 Turn−Off Delay Time td(OFF) 14.9 25 Fall Time tf 1.8 5.0 Turn−On Delay Time td(ON) VGS = 4.5 V, VDD = 24 V, ID = 2.9 A, RG = 2.5 W 7.8 ns Rise Time tr 12.6 Turn−Off Delay Time td(OFF) 9.6 Fall Time tf 2.8 7. Switching characteristics are independent of operating junction temperatures. |
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