© Semiconductor Components Industries, LLC, 2015

Febuary, 2015 − Rev. 5

1

Publication Order Number:

NTJD4158C/D

NTJD4158C, NVJD4158C

Small Signal MOSFET

30 V/−20 V, +0.25/−0.88 A,

Complementary, SC−88

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

N−Ch

30

V

P−Ch

−20

Gate−to−Source Voltage

N−Ch

±20

V

P−Ch

±12

N−Channel

Continuous Drain

Current (Note 1)

Steady

State

0.25

A

0.18

P−Channel

Continuous Drain

Current (Note 1)

Steady

State

−0.88

−0.63

Power Dissipation

(Note 1)

Steady

State

0.27

W

Pulsed Drain Cur-

rent

N−Ch

tp = 10

ms

0.5

A

P−Ch

−3.0

Operating Junction and Storage Temperature

−55 to

150

°C

Source Current (Body Diode)

N−Ch

0.25

A

P−Ch

−0.48

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

460

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

(Top View)

www.onsemi.com

6

5

4

1

2

3

N−Ch

30 V

1.0

W @ 4.5 V

0.25 A

1.5

W @ 2.5 V

215 m

W @ −4.5 V

P−Ch

−20 V

345 m

W @ −2.5 V

−0.88 A

SC−88 (SOT−363)

(6−Leads)

XXX M

G

G

1

6

1

MARKING DIAGRAM &

PIN ASSIGNMENT

SC−88 (SOT−363)

CASE 419B

STYLE 26

XXX

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

S1

G1 D2

D1 G2 S2

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION