NTHS4101P_12 datasheet(1/6 Pages) ONSEMI

Part #	NTHS4101P

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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March, 2012 − Rev. 4

1

Publication Order Number:

NTHS4101P/D

NTHS4101P

Power MOSFET

−20 V, 6.7 A, P−Channel ChipFETt

Features

• Offers an Ultra Low RDS(on) Solution in the ChipFET Package

• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6

making it an Ideal Device for Applications where Board Space is at a

Premium

• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Environments such as Portable Electronics

• Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the

Operating Voltage used in many Logic ICs in Portable Electronics

• Simplifies Circuit Design since Additional Boost Circuits for Gate

Voltages are not Required

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels using the same Basic Topology

• Pb−Free Package is Available

Applications

• Optimized for Battery and Load Management Applications in

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

• Charge Control in Battery Chargers

• Buck and Boost Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

Vdc

Gate−to−Source Voltage − Continuous

VGS

"8.0

Vdc

Drain Current − Continuous

− 5 seconds

ID

−4.8

−6.7

A

Total Power Dissipation

Continuous @ TA = 25°C

(5 sec) @ TA = 25°C

Continuous @ 85°C

(5 sec) @ 85°C

PD

1.3

2.5

0.7

1.3

W

Pulsed Drain Current − tp = 10 ms

IDM

−190

A

Operating Junction and Storage

Temperature Range

TJ, TSTG

−55 to

+150

°C

Continuous Source Current

Is

−4.8

A

Thermal Resistance (Note 1)

Junction−to−Ambient, 5 sec

Junction−to−Ambient, Continuous

RqJA

50

95

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

G

S

D

P−Channel MOSFET

Device

Package

Shipping†

ORDERING INFORMATION

NTHS4101PT1

ChipFET

3000 Tape / Reel

http://onsemi.com

−20 V

30 mW @ −2.5 V

21 mW @ −4.5 V

RDS(on) TYP

−6.7 A

ID MAX

V(BR)DSS

42 mW @ −1.8 V

NTHS4101PT1G

ChipFET

(Pb−free)

3000 Tape / Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

D

G

D

1

2

3

4

5

6

7

8

CONNECTIONS

ChipFET

CASE 1206A

STYLE 1

MARKING

DIAGRAM

C6 = Specific Device Code

M = Month Code

G = Pb−Free Package

1

2

3

4

8

7

6

5

1

8

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