© Semiconductor Components Industries, LLC, 2015

July, 2015 − Rev. 9

1

Publication Order Number:

NTJD5121N/D

NTJD5121N, NVJD5121N

Power MOSFET

60 V, 295 mA, Dual N−Channel with ESD

Protection, SC−88

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

60

V

Gate−to−Source Voltage

±20

V

Continuous Drain

Current (Note 1)

Steady

State

295

mA

212

t

304

219

Power Dissipation

(Note 1)

Steady

State

250

mW

t

≤ 5 s

266

Pulsed Drain Current

900

mA

Operating Junction and Storage Temperature

−55 to

150

°C

Source Current (Body Diode)

210

mA

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Gate−Source ESD Rating (HBM)

2000

V

Gate−Source ESD Rating (MM)

200

V

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient – Steady State

467

°C/W

Junction−to−Ambient – t

≤ 5 s

412

Junction−to−Lead – Steady State

252

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [2 oz] including traces).

Top View

www.onsemi.com

SC−88 (SOT−363)

6

5

4

1

2

3

60 V

1.6

W @ 10 V

2.5

W @ 4.5 V

295 mA

www.onsemi.com

MARKING DIAGRAM &

PIN ASSIGNMENT

XX M

G

G

1

6

1

XX

= Device Code

M

= Date Code

G

= Pb−Free Package

D1 G2 S2

S1 G1 D2

(Note: Microdot may be in either location)

SC−88/SOT−363

CASE 419B

STYLE 26

See detailed ordering and shipping information ion page 5 of

this data sheet.

ORDERING INFORMATION