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IXST35N120B Datasheet(PDF) 2 Page - IXYS Corporation |
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IXST35N120B Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = I C90; VCE = 10 V, 16 23 S Note 2 C ies 3600 pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz 260 pF C res 75 pF Q g 120 nC Q ge I C = I C90, VGE = 15 V, VCE = 0.5 VCES 33 nC Q gc 49 nC t d(on) 36 ns t ri 27 ns t d(off) 160 300 ns t fi 180 300 ns E off 59 mJ t d(on) 38 ns t ri 29 ns E on 2.5 mJ t d(off) 240 ns t fi 340 ns E off 9mJ R thJC 0.42 K/W R thCK (TO-247) 0.25 K/W Inductive load, T J = 125° °°°°C I C = I C90, VGE = 15 V R G = 5 Ω, V CE = 0.8 VCES Note 3 TO-247 AD Outline (IXSH) Inductive load, T J = 25° °°°°C I C = I C90, VGE = 15 V R G = 5 Ω V CE = 0.8 VCES Note 3 Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for V CE (Clamp) > 0.8 V CES, higher TJ or increased R G. 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-268 Outline (IXST) IXSH 35N120B IXST 35N120B Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 1 2.7 2.9 .106 .114 A 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 1 13.3 13.6 .524 .535 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 |
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