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IXGH28N60BD1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH28N60BD1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page 2 - 2 © 2000 IXYS All rights reserved Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = I C90; VCE = 10 V, 9 14 S Pulse test, t £ 300 ms, duty cycle £ 2 % C ies 1500 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 170 pF C res 40 pF Q g 80 100 nC Q ge I C = I C90, VGE = 15 V, VCE = 0.5 VCES 15 30 nC Q gc 30 40 nC t d(on) 15 ns t ri 25 ns t d(off) 200 400 ns t fi 200 400 ns E off 36 mJ t d(on) 15 ns t ri 25 ns E on 1mJ t d(off) 400 ns t fi 400 ns E off 6mJ R thJC 0.83 K/W R thCK TO-247 0.25 K/W Inductive load, T J = 25°C I C = I C90, VGE = 15 V, L = 100 mH, V CE = 0.8 V CES, RG = Roff = 10 W Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher TJ or increased R G Inductive load, T J = 125°C I C = I C90, VGE = 15 V, L = 100 mH V CE = 0.8 V CES, RG = Roff = 10 W Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher TJ or increased R G IXGH 28N60BD1 IXGT 28N60BD1 Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F I F = I C90, VGE = 0 V, T J = 150 °C 1.6 V Pulse test, t £ 300 ms, duty cycle d £ 2 % T J = 25 °C 2.5 V I RM I F = I C90, VGE = 0 V, -diF/dt = 100 A/ms6 A t rr V R = 100 V T J = 100 °C 100 ns I F = 1 A; -di/dt = 100 A/ ms; V R = 30 V T J = 25 °C25 ns R thJC 1K/W TO-247 AD (IXGH) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-268AA (D3 PAK) Dim. Millimeter Inches Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 1 2.7 2.9 .106 .114 A 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 1 13.3 13.6 .524 .535 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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