IXGH28N60BD1 datasheet(2/2 Pages) IXYS

Part #	IXGH28N60BD1

Description	Low VCE(sat) IGBT with Diode

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

I

C

= I

C90; VCE = 10 V,

9

14

S

Pulse test, t

£ 300 ms, duty cycle £ 2 %

C

ies

1500

pF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

170

pF

C

res

40

pF

Q

g

80

100

nC

Q

ge

I

C

= I

C90, VGE = 15 V, VCE = 0.5 VCES

15

30

nC

Q

gc

30

40

nC

t

d(on)

15

ns

t

ri

25

ns

t

d(off)

200

400

ns

t

fi

200

400

ns

E

off

36

mJ

t

d(on)

15

ns

t

ri

25

ns

E

on

1mJ

t

d(off)

400

ns

t

fi

400

ns

E

off

6mJ

R

thJC

0.83 K/W

R

thCK

TO-247

0.25

K/W

Inductive load, T

J = 25°C

I

C

= I

C90, VGE = 15 V, L = 100 mH,

V

CE

= 0.8 V

CES, RG = Roff = 10 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

G

Inductive load, T

J = 125°C

I

C

= I

C90, VGE = 15 V, L = 100 mH

V

CE

= 0.8 V

CES, RG = Roff = 10 W

Remarks: Switching times may increase

for V

CE (Clamp) > 0.8 • VCES, higher TJ or

increased R

G

IXGH 28N60BD1

IXGT 28N60BD1

Reverse Diode (FRED)

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F

= I

C90, VGE = 0 V,

T

J

= 150

°C

1.6

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 % T

J =

25

°C

2.5

V

I

RM

I

F

= I

C90, VGE = 0 V, -diF/dt = 100 A/ms6

A

t

rr

V

R = 100 V

T

J

= 100

°C 100

ns

I

F

= 1 A; -di/dt = 100 A/

ms; V

R = 30 V

T

J

= 25

°C25

ns

R

thJC

1K/W

TO-247 AD (IXGH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

TO-268AA (D3 PAK)

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

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