Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

IXFN340N06 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFN340N06
Description  HiPerFET Power MOSFETs Single Die MOSFET
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN340N06 Datasheet(HTML) 1 Page - IXYS Corporation

  IXFN340N06 Datasheet HTML 1Page - IXYS Corporation IXFN340N06 Datasheet HTML 2Page - IXYS Corporation  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
© 2000 IXYS All rights reserved
Features
•Internationalstandardpackages
•miniBLOC, withAluminiumnitride
isolation
•Low R
DS (on) HDMOS
TM process
•Ruggedpolysilicongatecellstructure
•UnclampedInductiveSwitching(UIS)
rated
•Lowpackageinductance
•FastintrinsicRectifier
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
Advantages
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 3 mA
60
V
V
GH(th)
V
DS = VGS, ID = 8 mA
2.0
4.0
V
I
GSS
V
GS = ±20 VDC, VDS = 0
±200 nA
I
DSS
V
DS =
V
DSS
T
J =
25
°C
100
mA
V
GS = 0 V
T
J = 125°C2
mA
R
DS(on)
V
GS = 10 V, ID = 100A
3
m
W
Pulse test, t
£ 300 ms,
duty cycle d
£ 2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C60
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MW
60
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C, Chip capability
340
A
I
L(RMS)
Terminalcurrentlimit
100
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
1360
A
I
AR
T
C
= 25
°C
200
A
E
AR
T
C
= 25
°C64
mJ
E
AS
T
C
= 25
°C4
J
dv/dt
I
S
£ I
DM, di/dt £ 100 A/ms, VDD £ VDSS,
5
V/ns
T
J
£ 150°C, R
G = 2 W
P
D
T
C
= 25
°C
700
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL £ 1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
30
g
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98751 (10/00)
D
S
G
S
S
G
S
D
miniBLOC,SOT-227B(IXFN)
E153432
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Advanced Technical Information
IXFN
340N06
V
DSS
=
60
V
I
D25
= 340
A
R
DS(on) =
3 mW
t
rr £ 250 ns


Html Pages

1  2 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn