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PHT41410B Datasheet(PDF) 1 Page - Teledyne Technologies Incorporated

Part # PHT41410B
Description  Up to 6 GHz Low Noise Silicon Bipolar Transistor
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Manufacturer  TELEDYNE [Teledyne Technologies Incorporated]
Direct Link  http://www.teledynemicrowave.com
Logo TELEDYNE - Teledyne Technologies Incorporated

PHT41410B Datasheet(HTML) 1 Page - Teledyne Technologies Incorporated

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Teledyne Microwave Solutions • 650-691-9800 • FAX: 650-962-6845
Specifications subject to change without notice.
PHT-41410B
Technical Data
PHT-41410B Suggested Maximum Ratings
Note:
1. Permanent damage may occur if any of these limits are exceeded.
Parameter
Suggested Maximum[1]
Emitter-Base Voltage
1.5V
Collector-Base Voltage
20V
Collector-Emitter Voltage
12V
Collector Current
60 mA
Junction Temperature
+200°C
Storage Temperature
-65 to +200°C
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
PHT-41410B
Description
The PHT-41410B is a general purpose NPN bipolar
transistor that offers excellent high frequency
performance. The PHT-41410B is housed in a
hermetic gold-ceramic 100 mil microstrip package. An
optimum noise match near 50 Ω at 1 GHz, makes this
device easy to use as a low noise amplifier.
100 mil Package Dimensions
.040
1.02
.100
2.54
TMS is not the original device manufacturer.
TMS procures commercial off the shelf product
and UpScreens per the following process flow. For
custom screening requirements, Quality Conformance
Inspection, or additional electrical selection, please
contact TMS.


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