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IRK Datasheet(PDF) 2 Page - International Rectifier

Part No. IRK
Description  SCR / SCR and SCR / DIODE MAGN-A-pak Power Modules
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRK Datasheet(HTML) 2 Page - International Rectifier

   
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IRK.170, .230, .250 Series
2
Bulletin I27102 rev. C 05/02
www.irf.com
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions
I
T(AV)
Maximum average on-state current
170
230
250
A
180o conduction, half sine wave
@ Case temperature
85
85
85
o
C
I
T(RMS) Maximum RMS on -state current
377
510
555
A
as AC switch
I
TSM
Maximum peak, one-cycle on-state,
5100
7500
8500
A
t = 10ms No voltage
non-repetitive surge current
5350
7850
8900
t = 8.3ms reapplied
4300
6300
7150
t = 10ms 100% V
RRM
4500
6600
7500
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
131
280
361
KA2s t = 10ms No voltage initial T
J = TJ max
119
256
330
t = 8.3ms reapplied
92.5
198
255
t = 10ms 100% V
RRM
84.4
181
233
t = 8.3ms reapplied
I2
√t
Maximum I2
√t for fusing
1310
2800
3610
KA2
√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1Low level value of threshold voltage
0.89
1.03
0.97
V
(16.7% x
πxI
T(AV) < I < π x IT(AV)), TJ = TJ max.
V
T(TO)2High level value of threshold voltage
1.12
1.07
1.00
(I >
π x I
T(AV)), TJ = TJ max.
r
t1
Low level on-state slope resistance
1.34
0.77
0.60
m
Ω (16.7% x πxI
T(AV) < I < π x IT(AV)), TJ = TJ max.
r
t2
High level on-state slope resistance
0.96
0.73
0.57
(I >
π x I
T(AV)), TJ = TJ max.
I
TM = π x IT(AV), TJ = TJ max., 180
o
conduction
Av. power = V
T(TO) x IT(AV) + rf x (IT(RMS))
2
I
H
Maximum holding current
500
500
500
mA Anode supply=12V, initial I
T=30A, TJ=25
o
C
I
L
Maximum latching current
1000
1000
1000
Anode supply=12V, resistive load=1
gate pulse: 10V, 100
µs, T
J = 25°C
Type number
Voltage
V
RRMVDRM , maximum
V
RSM , maximum non-repetitive
I
RRM IDRM max
Code
repetitive peak reverse and
peak reverse voltage
@ 130°C
off-state blocking voltage
VV
m A
04
400
500
50
IRK.170-
08
800
900
IRK.250-
12
1200
1300
14
1400
1500
16
1600
1700
IRK.230-
08
800
900
50
12
1200
1300
16
1600
1700
18
1800
1900
20
2000
2100
t
d
Typical delay time
1.0
µsT
J = 25
o
C, Gate Current=1A dI
g/dt=1A/µs
t
r
Typical rise time
2.0
Vd = 0,67% V
DRM
I
TM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
Voltage Ratings
ELECTRICAL SPECIFICATIONS
On-state Conduction
Switching
t
q
Typical turn-off time
50 - 150
µs
V
TM
Maximum on-state voltage drop
1.60
1.59
1.44
V
Parameters
IRK.170 IRK.230 IRK.250
Units Conditions


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