NTLUS3C18PZTBG datasheet(3/6 Pages) ONSEMI

Part #	NTLUS3C18PZTBG

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLUS3C18PZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

2.0

1.5

1.0

0.5

0

5

10

15

2.5

2.0

1.5

1.0

0.5

0

5

10

15

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

20

15

10

5

0

0.01

0.02

0.03

0.04

0.05

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.6

12

10

8

6

4

2

1E−09

1E−08

1E−07

1E−06

1E−05

.

VGS = −1.8 V

VGS = −2.0 V

−4.5 V to −2.5 V

VDS ≤ −10 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

ID = −7 A

TJ = 25°C

VGS = −1.8 V

VGS = −2.5 V

VGS = −4.5 V

150

1.0

1.5

VGS = −4.5 V

ID = −7 A

TJ = 125°C

TJ = 85°C

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