NTMFD4901NFT3G datasheet(10/12 Pages) ONSEMI

Part #	NTMFD4901NFT3G

Description	Dual N-Channel Power MOSFET

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NTMFD4901NF

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TYPICAL CHARACTERISTICS − Q2

Figure 19. Capacitance Variation

Figure 20. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

30

25

20

15

10

5

0

500

1000

2000

2500

3000

3500

4000

45

35

30

15

10

5

0

1

3

5

6

8

9

11

Figure 21. Resistive Switching Time Variation

vs. Gate Resistance

Figure 22. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.0

0.7

0.6

0.5

0.4

0.3

0

1

2

3

4

5

6

1500

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

20

25

40

2

4

7

10

ID = 10 A

TJ = 25°C

QT

Qgs

Qgd

VGS = 10 V

VDD = 15 V

ID = 10 A

td(off)

td(on)

tf

tr

TJ = 25°C

VGS = 0 V

7

8

9

10

0.1

0.2

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100

Figure 23. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0 V

≤ VGS ≤ 20 V

SINGLE PULSE

TA = 25°C

Single Pulse

1 ms

10

ms

10 ms

dc

100

ms

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