NTLJD3115P datasheet(3/7 Pages) ONSEMI

Part #	NTLJD3115P

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLJD3115P

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, Ref to 25°C

9.95

mV/°C

Zero Gate Voltage Drain Current

IDSS

VDS = −16 V, VGS = 0 V

TJ = 25°C

−1.0

mA

TJ = 85°C

−10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.4

−0.7

−1.0

V

Negative Gate Threshold

Temperature Coefficient

VGS(TH)/TJ

2.44

mV/°C

Drain−to−Source On−Resistance

RDS(on)

VGS = −4.5, ID = −2.0 A

75

100

mW

VGS = −2.5, ID = −2.0 A

101

135

VGS = −1.8, ID = −1.6 A

150

200

Forward Transconductance

gFS

VDS = −5.0 V, ID = −2.0 A

6.0

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −10 V

531

pF

Output Capacitance

COSS

91

Reverse Transfer Capacitance

CRSS

56

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −10 V,

ID = −2.0 A

5.5

6.2

nC

Threshold Gate Charge

QG(TH)

0.7

Gate−to−Source Charge

QGS

1.0

Gate−to−Drain Charge

QGD

1.4

Gate Resistance

RG

8.8

W

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −5.0 V,

ID = −1.0 A, RG = 6.0 W

6.0

ns

Rise Time

tr

11

Turn−Off Delay Time

td(OFF)

21

Fall Time

tf

8.0

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −10 V,

ID = −2.0 A, RG = 2.0 W

6.0

ns

Rise Time

tr

12

Turn−Off Delay Time

td(OFF)

19

Fall Time

tf

6.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

VSD

VGS = 0 V, IS = −1.0 A

TJ = 25°C

−0.75

−1.0

V

TJ = 125°C

−0.64

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −1.0 A

12.6

ns

Charge Time

ta

7.0

Discharge Time

tb

5.6

Reverse Recovery Time

QRR

5.0

nC

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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