NTLJS3113PT1G datasheet(4/6 Pages) ONSEMI

Part #	NTLJS3113PT1G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLJS3113P

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4

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

5

15

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1600

0

VGS

VDS

2000

800

010

VDS = VGS = 0 V

TJ = 25°C

Coss

Crss

2400

2800

Ciss

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

RG, GATE RESISTANCE (OHMS)

1

10

100

1000

1

100

tr

td(off)

td(on)

tf

10

VDD = −15 V

ID = −3.0 A

VGS = −4.5 V

2.5

0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

Figure 10. Diode Forward Voltage versus Current

1.0

1

0.6

2

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1

100

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

See Note 2, Page 1

SINGLE PULSE

TC = 25°C

1 ms

100 ms

10 ms

dc

TJ = 25°C

0.1

0.01

0

3

0

QG, TOTAL GATE CHARGE (nC)

5

4

48

ID = −3.0 A

TJ = 25°C

VGS

QGS

QGD

QT

2

1

12

8

0

20

12

4

VDS

16

3

0.8

0.4

0.2

1200

400

1.5

0.5

TJ = 150°C

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