NTLUD3A50PZ_14 datasheet(3/6 Pages) ONSEMI

Part #	NTLUD3A50PZ

Description	Power MOSFET

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NTLUD3A50PZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = −2.5 V

−3.0 V

−4.5 to −3.5 V

−1.5 V

VDS = −5 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

ID = −4.0 A

TJ = 25°C

−1.8 V

−2.5 V

VGS = −4.5 V

ID = −4.0 A

TJ = 85°C

TJ = 125°C

100

1000

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100000

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0

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0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

−1.8 V

−2 V

0

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0.5

1

1.5

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2.5

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0.14

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0.20

1.0

1.5

2.0

2.5

3.0

3.5

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4.5

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−1.5 V

0.7

0.8

0.9

1.0

1.1

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1.5

−50

−25

0

25

50

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125

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0.02

0.04

0.06

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0.12

0.14

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