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NVMD6P02R2G Datasheet(PDF) 2 Page - ON Semiconductor |
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NVMD6P02R2G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  NTMD6P02, NVMD6P02 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)* Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS −20 − − −11.6 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C) IDSS − − − − −1.0 −5.0 mAdc Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc) IGSS − − −100 nAdc Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) −0.6 − −0.88 2.6 −1.20 − Vdc mV/ °C Static Drain−to−Source On−State Resistance (VGS = −4.5 Vdc, ID = −6.2 Adc) (VGS = −2.5 Vdc, ID = −5.0 Adc) (VGS = −2.5 Vdc, ID = −3.1 Adc) RDS(on) − − − 0.027 0.038 0.038 0.033 0.050 − W Forward Transconductance (VDS = −10 Vdc, ID = −6.2 Adc) gFS − 15 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 1380 1700 pF Output Capacitance Coss − 515 775 Reverse Transfer Capacitance Crss − 250 450 SWITCHING CHARACTERISTICS (Notes 5 and 6) Turn−On Delay Time (VDD = −10 Vdc, ID = −1.0 Adc, VGS = −10 Vdc, RG = 6.0 W) td(on) − 15 25 ns Rise Time tr − 20 50 Turn−Off Delay Time td(off) − 85 125 Fall Time tf − 50 110 Turn−On Delay Time (VDD = −16 Vdc, ID = −6.2 Adc, VGS = −4.5 Vdc, RG = 6.0 W) td(on) − 17 − ns Rise Time tr − 65 − Turn−Off Delay Time td(off) − 50 − Fall Time tf − 80 − Total Gate Charge (VDS = −16 Vdc, VGS = −4.5 Vdc, ID = −6.2 Adc) Qtot − 20 35 nC Gate−Source Charge Qgs − 4.0 − Gate−Drain Charge Qgd − 8.0 − BODY−DRAIN DIODE RATINGS (Note 5) Diode Forward On−Voltage (IS = −1.7 Adc, VGS = 0 Vdc) (IS = −1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − −0.80 −0.65 −1.2 − Vdc Diode Forward On−Voltage (IS = −6.2 Adc, VGS = 0 Vdc) (IS = −6.2 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − −0.95 −0.80 − − Vdc Reverse Recovery Time (IS = −1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 50 80 ns ta − 20 − tr − 30 − Reverse Recovery Stored Charge QRR − 0.04 − mC 5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. *Handling precautions to protect against electrostatic discharge are mandatory. |
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Similar Description - NVMD6P02R2G |
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