NTMFS4823N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3.8

°C/W

Junction−to−Ambient – Steady State (Note 1)

59.4

Junction−to−Ambient – Steady State (Note 2)

146

Junction−to−Ambient − t v 10 sec

23

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

24

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

1.9

2.5

V

Negative Threshold Temperature Coefficient

5.1

mV/°C

Drain−to−Source On Resistance

11.5 V

9.2

10.6

mW

9.1

15.6

18.0

15.1

Forward Transconductance

26

S

CHARGES AND CAPACITANCES

Input Capacitance

795

pF

Output Capacitance

163

Reverse Transfer Capacitance

85

Total Gate Charge

6.0

11

nC

Threshold Gate Charge

1.0

Gate−to−Source Charge

2.6

Gate−to−Drain Charge

2.5

Total Gate Charge

13

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

10.8

ns

Rise Time

29

Turn−Off Delay Time

12.7

Fall Time

3.8

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.