NTMFS4823NT1G datasheet(5/6 Pages) ONSEMI

Part #	NTMFS4823NT1G

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4823N

http://onsemi.com

5

TYPICAL CHARACTERISTICS

QT

Surface−mounted on FR4 board

using 1 in sq. pad size, 1 oz Cu, t < 10 s

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

30

25

20

15

10

5

0

200

400

600

800

1000

1200

1400

14

12

10

8

6

4

2

0

2

4

6

8

10

12

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0

5

10

15

20

25

30

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ, STARTING JUNCTION TEMPERATURE (°C)

100

10

1

0.1

0.01

0.1

1

10

100

150

125

100

75

50

25

0

5

10

15

20

25

30

VGS = 0 V

TJ = 25°C

Ciss

Crss

Coss

ID = 30 A

TJ = 25°C

Qgs

Qgd

VGS

VDD = 15 V

ID = 30 A

VGS = 11.5 V

tr

tf

td(off)

td(on)

1.0

VGS = 0 V

TJ = 25°C

ID = 24 A

RqJA = 22°C/W

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

100 ms

1 ms

10 ms

dc

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