NTMFS4833N datasheet(3/7 Pages) ONSEMI

Part #	NTMFS4833N

Description	Power MOSFET 30V 191A Single N-Channel, SO-8FL

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NTMFS4833N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

−

0.8

1.0

V

TJ = 125°C

−

0.68

−

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

−

38

−

ns

Charge Time

ta

−

19

−

Discharge Time

tb

−

19

−

Reverse Recovery Charge

QRR

−

36

−

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

−

0.50

−

nH

Drain Inductance

LD

−

0.005

−

nH

Gate Inductance

LG

−

1.84

−

nH

Gate Resistance

RG

−

1.0

−

W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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